In an n-type silicon, which of the following statement is true:
Explanation
Option (C) is correct. According to the context, n-type semiconducting Si or Ge is obtained by doping with pentavalent atoms (donors) like As, Sb, P, etc. The context clearly states that in a semiconductor doped with pentavalent impurity, 'electrons become the majority carriers and holes the minority carriers.' Additionally, it mentions that 'In n-type semiconductors, n_e >> n_h' which confirms that electrons are majority carriers and holes are minority carriers. Options (A) and (D) are incorrect because they mention trivalent atoms as dopants, but trivalent atoms are used for p-type semiconductors, not n-type. Option (B) is incorrect because it states electrons are minority carriers, which contradicts the fact that in n-type semiconductors, electrons are the majority carriers.
Solution Steps
Step 1: Identify that n-type silicon is obtained by doping with pentavalent atoms (donors) like As, Sb, P.
Step 2: Note that in n-type semiconductors, electrons are majority carriers and holes are minority carriers (n_e >> n_h).
Step 3: Eliminate options (A) and (D) as they incorrectly mention trivalent atoms as dopants.
Step 4: Eliminate option (B) as it incorrectly states electrons are minority carriers.
Step 5: Conclude that option (C) correctly states both facts: holes are minority carriers and pentavalent atoms are the dopants.